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Národní úložiště šedé literatury Nalezeno 2 záznamů.  Hledání trvalo 0.01 vteřin. 
Microdefects in Czochralski Silicon
 Válek, Lukáš ; Fejfar, Antonín (oponent) ; Mikulík, Petr (oponent) ; Spousta, Jiří (vedoucí práce)
The doctoral thesis deals with analyses of defects in single crystals of Czochralski silicon doped with boron. Mechanisms of formation of circular patterns of oxidation induced stacking faults are studied. The main goal of the work is to explain the mechanisms of formation of the observed defect patterns and to develop methods for control of this phenomenon. Mechanisms of defect formation in silicon are analyzed and the material is experimentally studied in order to explain relations between formation of defects of various kinds and to link these processes to parameters of the crystal and its growth. A qualitative model capturing all these relations is built and utilized to develop an optimized crystal growth process for suppression of excessive formation of the oxidation induced stacking faults. Novel methods are developed and implemented to support effective analyses of crystal defects. This doctoral thesis was written with the support of ON Semiconductor Czech Republic, Rožnov pod Radhoštěm.
Úplný záznam
Microdefects in Czochralski Silicon
 Válek, Lukáš ; Fejfar, Antonín (oponent) ; Mikulík, Petr (oponent) ; Spousta, Jiří (vedoucí práce)
The doctoral thesis deals with analyses of defects in single crystals of Czochralski silicon doped with boron. Mechanisms of formation of circular patterns of oxidation induced stacking faults are studied. The main goal of the work is to explain the mechanisms of formation of the observed defect patterns and to develop methods for control of this phenomenon. Mechanisms of defect formation in silicon are analyzed and the material is experimentally studied in order to explain relations between formation of defects of various kinds and to link these processes to parameters of the crystal and its growth. A qualitative model capturing all these relations is built and utilized to develop an optimized crystal growth process for suppression of excessive formation of the oxidation induced stacking faults. Novel methods are developed and implemented to support effective analyses of crystal defects. This doctoral thesis was written with the support of ON Semiconductor Czech Republic, Rožnov pod Radhoštěm.
Úplný záznam

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